STP6N60FI n - channel enhancement mode power mos transistor n typical r ds(on) = 1 w n avalanche rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n application oriented characterization applications n high current, high speed switching n switch mode power supplies (smps) n chopper regulators, converters, motor control, lighting for industrial and consumer environment internal schematic diagram type v dss r ds(on) i d STP6N60FI 600 v < 1.2 w 3.8 a 1 2 3 isowatt220 may 1993 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v dgr drain- gate voltage (r gs = 20 k w )600v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 o c3.8a i d drain current (continuous) at t c = 100 o c2.4a i dm ( ) drain current (pulsed) 24 a p tot total dissipation at t c = 25 o c40w derating factor 0.32 w/ o c v iso insulation withstand voltage (dc) 2000 v t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area 1/9
thermal data r thj-case r thj-amb r thj-amb t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 3.12 62.5 0.5 300 o c/w o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 6a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 25 v) 370 mj e ar repetitive avalanche energy (pulse width limited by t j max, d < 1%) 17 mj i ar avalanche current, repetitive or not-repetitive (t c = 100 o c, pulse width limited by t j max, d < 1%) 3.7 a electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating x 0.8 t c = 125 o c 250 1000 m a m a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 234v r ds(on) static drain-source on resistance v gs = 10v i d = 3 a v gs = 10v i d = 3 a t c = 100 o c 11.2 2.4 w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 6a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds > i d(on) x r ds(on)max i d = 3 a 2 4.8 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 1150 160 75 1500 240 110 pf pf pf STP6N60FI 2/9
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 300 v i d = 3 a r g = 50 w v gs = 10 v (see test circuit, figure 3) 50 140 65 175 ns ns (di/dt) on turn-on current slope v dd = 480 v i d = 6 a r g = 50 w v gs = 10 v (see test circuit, figure 5) 240 a/ m s q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v i d = 6 a v gs = 10 v 78 8 41 98 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 480 v i d = 6 a r g = 50 w v gs = 10 v (see test circuit, figure 5) 100 27 145 125 34 180 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 3.8 24 a a v sd ( * ) forward on voltage i sd = 6 a v gs = 0 2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 6 a di/dt = 100 a/ m s v dd = 100 v t j = 150 o c (see test circuit, figure 5) 750 13.5 38 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating area thermal impedance STP6N60FI 3/9
derating curve transfer characteristics static drain-source on resistance output characteristics transconductance gate charge vs gate-source voltage STP6N60FI 4/9
capacitance variations normalized gate threshold voltage vs temperature normalized on resistance vs temperature turn-on current slope cross-over time turn-off drain-source voltage slope STP6N60FI 5/9
switching safe operating area accidental overload area source-drain diode forward characteristics fig. 1: unclamped inductive load test circuits fig. 2: unclamped inductive waveforms STP6N60FI 6/9
fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times fig. 3: switching times test circuits for resistive load STP6N60FI 7/9
dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.4 0.7 0.015 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 3.66 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 ? f l3 g1 123 f2 f1 l7 l4 isowatt220 mechanical data p011g STP6N60FI 8/9
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a STP6N60FI 9/9
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